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Jones (University of Florida)", "Wilfried Lerch (Fraunhofer EMFT)", "Sean Jones (Axcelis Technologies)", "Leonard Rubin (Axcelis Technologies)", "Werner Schustereder (Infineon Technologies Austria AG)", "Santosh Kurinec (Rochester Institute of Technology, RIT)", "Andreas Kopp (Infineon Technologies Austria AG)", "Thomas Reisinger (Infineon Technologies Austria AG)", "Daniel Valtiner (Infineon Technologies Austria AG)", "Ignaz Eisele (Fraunhofer Munich)", "Alexander Veiter (Infineon Technologies Austria AG)", "Joerg Ortner (Infineon Technologies Austria AG)", "Georg Ehrentraut (Infineon Technologies Austria AG)", "Moriz Jelinek (Infineon Technologies Austria AG)", "David-Johannes Mendler (Infineon Technologies Austria AG)", "Christian Grindling (Infineon Technologies Austria AG)", "Christoph Ahamer (Infineon Technologies Austria AG)", "Daniela Pinczolits (Infineon Technologies Austria AG)", "Christof Altst\u00e4tter", "Carsten Koblinski (Infineon Technologies Austria AG)"]}, "landingJson": {"configData": {"alumniWidgetTitle": "People who work at Infineon Technologies", "companyDesc": "", "companyName": "", "confirmationConfig": {"confirmationHeadingText": "Thank you for your registration!", "confirmationBodyText": "We have sent you a confirmation e-mail and SMS. 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Focus on silicon.", "speakerSocialLinks": ["https://www.emft.fraunhofer.de/de/labore/mems.html"]}, {"speakerName": "Sean Jones (Axcelis Technologies)", "speakerTitle": "Ion Channeling in Si and SiC", "speakerImage": "https://static.vscdn.net/images/event_speaker_image/1774947974-V3pqNZb3dg.jpg", "speakerDescription": "Any ion implantation into a crystalline substrate must account for channeling\u2014alignment of ion trajectories with crystal planes that lowers stopping power, alters depth profiles, and can triple mean range. Whether targeted or suppressed, channeling strongly affects process outcomes. This class links crystallographic fundamentals to practical results, drawing on decades of research in silicon and silicon carbide.", "speakerSocialLinks": ["https://www.researchgate.net/profile/Sean-Jones-31"]}, {"speakerName": "Leonard Rubin (Axcelis Technologies)", "speakerTitle": "Process Integration and Application for Logic, Memory and Image Sensors", "speakerImage": "https://static.vscdn.net/images/event_speaker_image/1774948116-V3pqNZb3dg.jpg", "speakerDescription": "Ion implantation is pivotal for advanced CMOS, offering flexible choice of dopants, spatial targeting, and fine control of profiles to speed new process nodes and reduce tradeoffs. This talk reviews the history, current roles, and future trends of implantation for both doping and material modification in planar and 3D (FinFET) CMOS, with extensions to memory and image sensors.", "speakerSocialLinks": ["https://www.linkedin.com/in/leonard-rubin-1855891/"]}, {"speakerName": "Werner Schustereder (Infineon Technologies Austria AG)", "speakerTitle": "Ion Implantation Challenges for Power Devices and Wide Band Gap Materials", "speakerImage": "https://static.vscdn.net/images/event_speaker_image/1774948305-V3pqNZb3dg.jpg", "speakerDescription": "Power devices drive the electrified economy from consumer to data centers. Meeting efficiency and reliability targets relies on ion implantation. Beyond CMOS, power tech needs precise backside implants and engineering for junctions and isolation, with tight control of energy, dose, angle, and temperature. 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